Batch Production of Wafer-Scale Monolayer MoS2

Abstract

Monolayer MoS2 has emerged as a highly promising candidate for next-generation electronics. However, the production of monolayer MoS2 with a high yield and low cost remains a challenge that impedes its practical application. Here, a significant breakthrough in the batch production of wafer-scale monolayer MoS2 via chemical vapor deposition is reported. Notably, a single preparation process enables the growth of multiple wafers simultaneously. The homogeneity and cleanliness of the entire wafer, as well as the consistency of different wafers within a batch, are demonstrated via morphology characterizations and spectroscopic measurements. Field-effect transistors fabricated using the grown MoS2 exhibit excellent electrical performances, confirming the high quality of the films obtained via this novel batch production method. Additionally, we successfully demonstrate the batch production of wafer-scale oxygen-doped MoS2 films via in situ oxygen doping. This work establishes a pathway towards mass preparation of two-dimensional materials and accelerates their development for diverse applications.