Ferrocene Molecular Architectures Grafted on Si(111): A Theoretical Calculation of the Standard Oxidation Potentials and Electron Transfer Rate Constant-Reference-Cited by-同舟云学术

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Ferrocene Molecular Architectures Grafted on Si(111): A Theoretical Calculation of the Standard Oxidation Potentials and Electron Transfer Rate Constant

Published:2017-09-21 Issue:10 Volume:10 Page:1109
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Fontanesi Claudio,Innocenti Massimo,Vanossi Davide,Da Como Enrico^ORCID

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/10/10/1109/pdf

Reference72 articles.

1. Preface;Nalwa,2001

2. Semiconductor Silicon Crystal Technology;Shimura,1989

3. Porous Silicon from Formation to Application: Formation and Properties;Korotcenkov,2015

4. Silicon Photonics Design Devices Systems|Electronic, Optoelectronic Devices, and Nanotechnology;Chrostowski,2015

5. Nanoscale Silicon Waveguide Based Thermo-Optic Sensor Using a Compact Mach-Zehnder Interferometer

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic and Transport Properties of Covalent Functionalized Monolayer MoS2 by Ferrocene Derivatives;JOM;2022-09-19

2. Redox-Active Ferrocene grafted on H-Terminated Si(111): Electrochemical Characterization of the Charge Transport Mechanism and Dynamics;Scientific Reports;2019-06-19

3. Measuring Standard Potentials of Organic Anions and Inorganic Complexes: An Integrated Approach to Quantum Mechanical and Experimental Methods to Study the Electrochemical Processes;Reference Module in Chemistry, Molecular Sciences and Chemical Engineering;2018

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