High Crystallinity Vertical Few-Layer Graphene Grown Using Template Method Assisted ICPCVD Approach

Abstract

Controllable synthesis of high crystallinity, low defects vertical few-layer graphene (VFLG) is significant for its application in electron emission, sensor or energy storage, etc. In this paper, a template method was introduced to grow high crystallinity VFLG (HCVFLG). A copper mask acted as a template which has two effects in the high-density plasma enhanced deposition which are protecting VFLG from ion etching and creating a molecular gas flow to assist efficient growth. Raman and TEM results confirmed the improved crystallinity of VFLG with the assistance of a copper mask. As a field emitter, the HCVFLG has a large field emission current and a low turn-on field. The maximum field emission current of a single HCVFLG sheet reaches 93 μA which is two orders of magnitude higher than VFLG grown without a mask. The maximum current density of HCVFLG film reached 67.15 mA/cm2 and is 2.6 times of VFLG grown without a mask. The vacuum breakdown mechanism of HCVFLG was contacted interface damage resulting in VFLG detaching from the substrate. This work provides a practical strategy for high-quality VFLG controllable synthesis and provides a simple method to realize the pattern growth of VFLG.