Cherenkov-Type Terahertz Generation by Long-Wavelength Ultrafast Laser Excitation of a GaP Crystal

Abstract

We explore, both theoretically and experimentally, the potential of semiconductor materials for the Cherenkov scheme of terahertz generation on the example of GaP crystal pumped by femtosecond laser pulses of 1.54 μm wavelength. We use a convenient scheme with a focused-to-a-line laser beam which is introduced into the crystal by oblique incidence at the Brewster angle on the crystal front face and propagates in the crystal at the Cherenkov angle to its normal. A half of the generated Cherenkov wedge impinges normally the rear face of the crystal and generates an output terahertz beam with a plane wavefront. The whole generation process is simulated by FDTD method. In experiments, the laser pulses of 140 fs duration and 10 μJ energy were converted to wideband (~2.5 THz bandwidth) terahertz radiation with the efficiency of ~3 × 10−5, which exceeds the efficiency of the standard collinear scheme by at least an order of magnitude.