Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Abstract

Ultra-short laser pulses (1030 nm/230 fs) were used to laser ablate the surface of crystalline sapphire (Al2O3) at high intensity per pulse 20–200 TW/cm2/pulse. Laser-ablated patterns were annealed at a high temperature of 1500 °C. Surface reconstruction took place, removing the ablation debris field at the edges of ablated pits in oxygen flow (O2 flow). Partial reconstruction of ripples was also observed when multi-pulse ablated surfaces were annealed at high temperature in O2 flow. Back-side ablation of a 0.5-mm-thick Al2O3 produced high surface roughness ∼1μm which was reduced to ∼0.2μm by high-temperature annealing at 1500 °C for 2 h in O2. Improvement of surface quality was due to restructuring of the crystalline surface and sublimation, while the defined 3D shape of a micro-lens was not altered after HTA (no thermal morphing).