SCAPS Empowered Machine Learning Modelling of Perovskite Solar Cells: Predictive Design of Active Layer and Hole Transport Materials

Author:

Hasanzadeh Azar Mahdi1,Aynehband Samaneh2,Abdollahi Habib3,Alimohammadi Homayoon3,Rajabi Nooshin3,Angizi Shayan4ORCID,Kamraninejad Vahid3,Teimouri Razieh5,Mohammadpour Raheleh5,Simchi Abdolreza35ORCID

Affiliation:

1. Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L8, Canada

2. Department of Physics & Atmospheric Science, Dalhousie University, Halifax, NS B3H 4J5, Canada

3. Department of Material Science and Engineering, Sharif University of Technology, Tehran 14588, Iran

4. Department of Chemistry and Chemical Biology, McMaster University, Hamilton, ON L8S 4M1, Canada

5. Institute for Nanoscience and Nanotechnology, Sharif University of Technology, Tehran 14588, Iran

Abstract

Recently, organic–inorganic perovskites have manifested great capacity to enhance the performance of photovoltaic systems, owing to their impressive optical and electronic properties. In this simulation survey, we employed the Solar Cell Capacitance Simulator (SCAPS-1D) to numerically analyze the effect of different hole transport layers (HTLs) (Spiro, CIS, and CsSnI3) and perovskite active layers (ALs) (FAPbI3, MAPbI3, and CsPbI3) on the solar cells’ performance with an assumed configuration of FTO/SnO2/AL/HTL/Au. The influence of layer thickness, doping density, and defect density was studied. Then, we trained a machine learning (ML) model to perform predictions on the performance metrics of the solar cells. According to the SCAPS results, CsSnI3 (as HTL) with a thickness of 220 nm, a defect density of 5 × 1017 cm−3, and a doping density of 5 × 1019 cm−3 yielded the highest power conversion efficiency (PCE) of 23.90%. In addition, a 530 nm-FAPbI3 AL with a bandgap energy of 1.51 eV and a defect density of 1014 cm−3 was more favorable than MAPbI3 (1.55 eV) and CsPbI3 (1.73 eV) to attain a PCE of >24%. ML predicted the performance matrices of the investigated solar cells with ~75% accuracy. Therefore, the FTO/SnO2/FAPbI3/CsSnI3/Au structure would be suitable for experimental studies to fabricate high-performance photovoltaic devices.

Funder

INSF

Sharif University of Technology

Niroo Research Institute

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

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