Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers

Abstract

We study the applicability of InGaAs/GaAs quantum well-dots (QWDs) for active regions of broadband superluminescent diodes (SLDs) emitting in the 950–1150 nm spectral range; 2 mm long SLDs with a bent section and an active region based on seven chirped QWD layers show emission spectra centered at 1030 nm with a full-width at half-maximum of 80 nm and an output power of 2 mW. In a 250 µm long SLD with a tilted stripe that has an increased output loss, the width of the emission spectra is 113 nm at 20 °C and 120 nm at 60 °C.