Measurement of Stress Optical Coefficient for Silicone Adhesive Based on Terahertz Time Domain Spectroscopy

Abstract

The bonding structure is affected by environmental loads during use, causing internal stress in the adhesive layer, which leads to the debonding and expansion of the bonding layer. Therefore, it is important to accurately measure the stress distribution of the bonding layer to assess the life of the bonding structure. In this study, based on the transmission and reflection terahertz time-domain spectroscopy (THz-TDS) technique, the stress optical coefficients of a silicone adhesive were measured, and the calculation models of the transmission and reflection stress optical coefficients were derived. In the reflection calculation model, the caliper THz thickness measurement method was proposed to compensate for the thickness change of the silicone adhesive, under tensile stress. Under the transmission THz-TDS stress optical coefficient calculation model, the stress optical coefficient C of the silicone adhesive is 0.1142 ± 0.0057 MPa−1, and the stress optical coefficient C of the reflective system is 0.1135 ± 0.0051 MPa−1. The test results show that the reflective THz-TDS can also be used to measure the optical stress coefficient of the material, which compensates for the shortcomings of the traditional transmission measurement method, and lays a foundation for the characterization of the internal stress of the adhesive layer of the adhesive structure.