The Light-Trapping Character of Pit Arrays on the Surface of Solar Cells

Author:

Zhu Baohua12,Chen Le1,Ye Song1ORCID,Luo Wei1

Affiliation:

1. Guangxi Key Laboratory of Optoelectronic Information Processing, School of Optoelectronic Engineering, Guilin University of Electronic Technology, Guilin 541004, China

2. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China

Abstract

Surfaces with light-trapping structures are widely used in solar cells to enhance light capturing and to transform efficiency. The study of light-trapping character is important for light-trapping structures in solar cells. In the present study, the light-trapping character for the regular hemisphere pit arrays (RHPAs) in solar cells was intensively investigated in terms of reducing light reflection, suppressing light escape, and increasing the length of the optical path. Results show that the RHPAs can decrease surface reflectivity by ~54% compared with the plane structure, and can reflect ~33% of the light that has not been absorbed back into the absorption layer of the solar cell. The total optical path of the cell with the RHPAs structure remarkably increased from 2ω to 4ω. To verify the theoretical research conclusions, we produced the glass structure samples with different aspect ratios by using micro/nanometer-processing technology. The reflection ratios for silicon wafers covered by plane and RHPAs glass samples were tested. The test results were compared with the theoretical calculation results, which showed consistency.

Funder

Department of Science and Technology of Gaungxi

Guangxi Key Laboratory of Automatic Detection Technology and Instruments

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

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