Mode-Modulation Structure Based on 650 nm Ridge Waveguide Edge-Emitting Laser-Reference-Cited by-同舟云学术

Mode-Modulation Structure Based on 650 nm Ridge Waveguide Edge-Emitting Laser

Published:2023-03-12 Issue:3 Volume:10 Page:302
ISSN:2304-6732
Container-title:Photonics
language:en
Short-container-title:Photonics

Author:

Sun Xiao¹²,Liu Peng¹²,Ma Xiangen¹²,Zhang Xiaodong²^ORCID,Su Jian²,Chen Kang²,Liu Qi²,Jiang Kai¹,Tang Wenjing¹^ORCID,Xia Wei¹²,Xu Xiangang²³

Affiliation:

1. School of Physics and Technology, University of Jinan, Jinan 250022, China

2. Shandong Huaguang Optoelectronics Co., Ltd., Jinan 250101, China

3. Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

Abstract

Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP laser diodes (LD) with a 650 nm range and a trench mode-modulation structure based on the structure of edge-emitting laser (EEL) diodes. The effect of the three-trench structure was investigated theoretically and experimentally. The right trench structure laser chips demonstrated good beam quality while maintaining a high power output. An electro-optical conversion efficiency of 56% was demonstrated with a slope efficiency of 1.32 W/A at a 40 mA current. The maximum optical output power reached 40.8 mW.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Industrial Chain Program of Shandong Laser Equipment Innovation and Entrepreneurship Community

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

Link

https://www.mdpi.com/2304-6732/10/3/302/pdf

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