Modeling and Analysis of Device Orientation, Analog and Digital Performance of Electrode Design for High Speed Electro-Optic Modulator

Author:

Gaur Tushar1,Mishra Pragya1,Hegde Gopalkrishna1,Srinivas Talabattula1ORCID

Affiliation:

1. Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, Karnataka, India

Abstract

Electro-optic modulators (EOMs) are crucial devices for modern communication enabling high bandwidth optical communication links. Traveling wave electrodes are used to obtain high-speed modulation in these EOMs. We present the electrode design and analysis along with the study of effects of changing orientation on device performance for a thin-film lithium niobate tunable Mach–Zehnder interferometer (MZI) that offers sub-THz bandwidth operations. High velocity and impedance matching with low RF attenuation, high third-order SFDR (∼121 dB/Hz2/3) and a low half-wave voltage length product (1.74 V.cm) have been achieved for a bandwidth of 136 GHz. High-speed digital modulation using multi-level signal formats (PAM-2, QAM-4 and QAM-16) with low BER for 400 Gbps data has been demonstrated to assess the digital performance of the device.

Funder

Ministry of Education, Government of India, under Prime Minister’s Research Fellowship scheme

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

Reference31 articles.

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