Broadband Polarization Rotator and Splitter Based on 70 nm-Etched Waveguides on SOI Platform

Author:

Tian YeORCID,Kang ZheORCID,Dai Tingge,Xu PeipengORCID,Li Yan,Lv YegangORCID,Zhang XiaoweiORCID

Abstract

The standard silicon photonic platforms provide three-step silicon etching, i.e., 220 nm for full etching, 70 nm for shallow etching, and 130 nm (or 150 nm) for slab etching. Previously reported mode-evolution-based polarization rotators and splitters (PSRs) usually employ 130 nm-etched slab waveguides for adiabatic TM0-to-TE1 conversion, however, they are not compatible with the platforms adopting 150 nm-etching techniques. In this paper, we demonstrate a broadband PSR based on 70 nm-etched slab waveguides, which is compatible with all the platforms. The PSR consists of a bi-level taper and an inverse-tapered coupler. The length of the polarization rotator shrinks from hundreds to only thirty microns by employing the 70 nm-etched slab waveguides, while a high efficiency of >95% is achieved, covering an ultra-wide bandwidth from 1250 nm to 1650 nm. The proposed PSR shows superior performance over S, C, and L bands. Low cross-talk of <−20 dB and a loss of <1.5 dB are experimentally confirmed over a wavelength range of 75 nm.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Natural Science Foundation of Ningbo

Key Research and Development Program of Jiangsu Province

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

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