The Effect of Light Intensity, Temperature, and Oxygen Pressure on the Photo-Oxidation Rate of Bare PbS Quantum Dots
Author:
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/8/5/341/pdf
Reference27 articles.
1. Hybrid graphene–quantum dot phototransistors with ultrahigh gain
2. Quantum dot field effect transistors
3. Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors
4. Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells
5. In Situ Passivation for Efficient PbS Quantum Dot Solar Cells by Precursor Engineering
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