Abstract
We demonstrate a novel narrow-linewidth configuration of a wavelength-swept active mode locking (AML) fiber laser. The frequency response of the modulation depth of a semiconductor optical amplifier can be improved in a higher modulation frequency region by adapting the cross gain modulation (XGM) configuration, compared to that of the conventional direct gain modulation (DGM) configuration. As a sufficient modulation depth is implemented for an AML at higher modulation frequencies at around gigahertz order, it results in a narrower linewidth of lasing output. For the same modulation frequency of 1361.25 MHz, the linewidth of 0.25 nm with DGM becomes narrower up to 0.113 nm with XGM, which corresponds to an improved point spread function with 1.41 mm of 6-dB roll-off.
Funder
the Agency for Defense Development,
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
2 articles.
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