High-Temperature Failure Evolution Analysis of K-Type Film Thermocouples

Author:

Ruan Yong1,Li Jiaheng2,Xiao Qian2,Wu Yu3ORCID,Shi Meng4

Affiliation:

1. Department of Precision Instruments, Tsinghua University, Beijing 100084, China

2. Department of Electronic Information, Beijing Information Science and Technology University, Beijing 100192, China

3. Qi Yuan Laboratory, Beijing 100094, China

4. MEMS Institute of Zibo National High-Tech Industrial Development Zone, Zibo 255000, China

Abstract

Ni90%Cr10% and Ni97%Si3% thin-film thermocouples (TFTCs) were fabricated on a silicon substrate using magnetron sputtering technology. Static calibration yielded a Seebeck coefficient of 23.00 μV/°C. During staged temperature elevation of the TFTCs while continuously monitoring their thermoelectric output, a rapid decline in thermoelectric potential was observed upon the hot junction reaching 600 °C; the device had failed. Through three cycles of repetitive static calibration tests ranging from room temperature to 500 °C, it was observed that the thermoelectric performance of the TFTCs deteriorated as the testing progressed. Utilizing the same methodology, Ni-Cr and Ni-Si thin films corresponding to the positive and negative electrodes of the TFTCs were prepared. Their resistivity after undergoing various temperature annealing treatments was measured. Additionally, their surfaces were characterized using Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). The causes behind the decline in thermoelectric performance at elevated temperatures were analyzed from both chemical composition and microstructural perspectives.

Funder

The National Key Research and Development Program of China

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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