Plasma Fluorinated Nano-SiO2 Enhances the Surface Insulation Performance of Glass Fiber Reinforced Polymer

Author:

Duan Qijun12ORCID,Xia Guowei2,Song Yanze12,Yin Guohua2,Zhong Yuyao2,Xie Jun2ORCID,Xie Qing12

Affiliation:

1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China

2. Hebei Provincial Key Laboratory of Power Transmission Equipment Security Defense, North China Electric Power University, Baoding 071003, China

Abstract

With the extensive application of glass fiber reinforced polymer (GFRP) in the field of high voltage insulation, its operating environment is becoming more and more complex, and the surface insulation failure has gradually become a pivotal problem affecting the safety of equipment. In this paper, nano-SiO2 was fluorinated by Dielectric barrier discharges (DBD) plasma and doped with GFRP to enhance the insulation performance. Through Fourier Transform Ioncyclotron Resonance (FTIR) and X-ray Photoelectron Spectroscopy (XPS) characterization of nano fillers before and after modification, it was found that plasma fluorination can graft a large number of fluorinated groups on the surface of SiO2. The introduction of fluorinated SiO2 (FSiO2) can significantly enhance the interfacial bonding strength of the fiber, matrix and filler in GFRP. The DC surface flashover voltage of modified GFRP was further tested. The results show that both SiO2 and FSiO2 can improve the flashover voltage of GFRP. When the concentration of FSiO2 is 3%, the flashover voltage increases most significantly to 14.71 kV, which is 38.77% higher than that of unmodified GFRP. The charge dissipation test results show that the addition of FSiO2 can inhibit the surface charge migration. By the calculation of Density functional theory (DFT) and charge trap, it is found that grafting fluorine-containing groups on SiO2 can increase its band gap and enhance its electron binding ability. Furthermore, a large number of deep trap levels are introduced into the nanointerface inside GFRP to enhance the inhibition of secondary electron collapse, thus increasing the flashover voltage.

Funder

National Natural Science Foundation of China

Beijing Natural Science Foundation

Hebei Province Master’s Degree Students in the Innovative Ability Training Funding Program

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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