Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application-Reference-Cited by-同舟云学术

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Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application

Published:2016-08-30 Issue:9 Volume:16 Page:1389
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Chatterjee Prasenjit,Chow Hwang-Cherng,Feng Wu-Shiung

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/16/9/1389/pdf

Reference20 articles.

1. A magnetic field sensor based on a magnetic fluid-filled FP-FBG structure;Xia;Sensors,2016

2. Nano-magnetic immunosensor based on staphylococcus protein A and the amplification effect of HRP-conjugated phage antibody;Mu;Sensors,2015

3. Dynamic vehicle detection via the use of magnetic field sensors;Markevicius;Sensors,2016

4. A 3-axis miniature magnetic sensor based on a planar fluxgate magnetometer with an orthogonal fluxguide;Lu;Sensors,2015

5. The hall effect and related phenomena;Beer;Solid-State Electron.,1966

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect;Sensors;2017-05-24

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