Boosting the Self-Trapped Exciton Emission in Cs4SnBr6 Zero-Dimensional Perovskite via Rapid Heat Treatment

Author:

Wu Haixia1,Lin Zhenxu1,Song Jie1,Zhang Yi1,Guo Yanqing1,Zhang Wenxing1ORCID,Huang Rui1ORCID

Affiliation:

1. School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China

Abstract

Zero-dimensional (0D) tin halide perovskites feature extraordinary properties, such as broadband emission, high photoluminescence quantum yield, and self-absorption-free characteristics. The innovation of synthesis approaches for high-quality 0D tin halide perovskites has facilitated the flourishing development of perovskite-based optoelectronic devices in recent years. However, discovering an effective strategy to further enhance their emission efficiency remains a considerable challenge. Herein, we report a unique strategy employing rapid heat treatment to attain efficient self-trapped exciton (STE) emission in Cs4SnBr6 zero-dimensional perovskite. Compared to the pristine Cs4SnBr6, rapid thermal treatment (RTT) at 200 °C for a duration of 120 s results in an augmented STE emission with the photoluminescence (PL) quantum yield rising from an initial 50.1% to a substantial 64.7%. Temperature-dependent PL spectra analysis, Raman spectra, and PL decay traces reveal that the PL improvement is attributed to the appropriate electron–phonon coupling as well as the increased binding energies of STEs induced by the RTT. Our findings open up a new avenue for efficient luminescent 0D tin-halide perovskites toward the development of efficient optoelectronic devices based on 0D perovskites.

Funder

Guangdong Basic and Applied Basic Research Foundation

Project of Guangdong Province Key Discipline Scientific Research Level Improvement

Special Innovation Projects of Guangdong Provincial Department of Education

Advanced Materials and Devices Laboratory

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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