Optoelectronic Properties of MAPbBr3 Perovskite Light-Emitting Diodes Using Anti-Solvent and PEDOT:PSS/PVK Double-Layer Hole Transport Layers

Abstract

Perovskite light-emitting diodes (PeLEDs) have attracted extensive attention due to their advantages such as low-temperature solution processing, high photoluminescence quantum efficiency, high color purity, tunable wavelength, and excellent carrier mobility. The hole transport layer plays an important role in the device’s performance. In this paper, the effect of anti-solvent (ethyl acetate) on the performance of PeLEDs was studied in order to determine the optimal anti-solvent condition. The effect of PEDOT:PSS/PVK double-layer hole transport layers on the optoelectronic properties of MAPbBr3 PeLEDs was investigated. The device with 8 mg/mL PVK produced the best results, with a maximum luminance of 5139 cd/m2 and a maximum current efficiency of 2.77 cd/A. Compared with the control device with PEDOT:PSS HTL, the maximum luminance of the device with 8 mg/mL PVK is increased by 2.02 times, and the maximum current efficiency is increased by 188%. The experimental results show that the addition of PVK helps to reduce the size of perovskite particles, contributing to the spatial confinement of excitons, and suppress the quenching of luminescence occurring at the interface between PEDOT:PSS and MAPbBr3, thereby enhancing the optoelectronic performance of PeLEDs. The results of this paper can provide a basis for the improvement and industrialization of PeLEDs.