Structural, Elastic, Electronic, and Magnetic Properties of Full-Heusler Alloys Sc2TiAl and Sc2TiSi Using the FP-LAPW Method

Author:

Al-Masri Khadejah M.1,Abu-Jafar Mohammed S.1ORCID,Farout Mahmoud1ORCID,Dahliah Diana1,Mousa Ahmad A.23ORCID,Azar Said M.4ORCID,Khenata Rabah5

Affiliation:

1. Department of Physics, An-Najah National University, Nablus P.O. Box 7, Palestine

2. Department of Basic Sciences, Middle East University, Amman 11831, Jordan

3. Applied Science Research Center, Applied Science Private University, Amman 11831, Jordan

4. Department of Physics, Faculty of Science, Zarqa University, Zarqa 13132, Jordan

5. Laboratoire de Physique Quantique et de Modélisation Mathématique de la Matière (LPQ3M), Université de Mascara, Mascara 29000, Algeria

Abstract

In this article, the structural, elastic, electronic, and magnetic characteristics of both regular and inverse Heusler alloys, Sc2TiAl and Sc2TiSi, were investigated using a full-potential, linearized augmented plane-wave (FP-LAPW) method, within the density functional theory. The optimized structural parameters were determined from the minimization of the total energy versus the volume of the unit cell. The band structure and DOS calculations were performed within the generalized gradient approximation (GGA) and modified Becke–Johnson approaches (mBJ-GGA), employed in the Wien2K code. The density of states (DOS) and band structure (BS) indicate the metallic nature of the regular structure of the two compounds. The total spin magnetic moments for the two compounds were consistent with the previous theoretical results. We calculated the elastic properties: bulk moduli, B, Poisson’s ratio, ν, shear modulus, S, Young’s modulus (Y), and the B/s ratio. Additionally, we used Blackman’s diagram and Every’s diagram to compare the elastic properties of the studied compounds, whereas Pugh’s and Poisson’s ratios were used in the analysis of the relationship between interatomic bonding type and physical properties. Mechanically, we found that the regular and inverse full-Heusler compounds Sc2TiAl and Sc2TiSi were stable. The results agree with previous studies, providing a road map for possible uses in electronic devices.

Publisher

MDPI AG

Subject

Materials Chemistry,Chemistry (miscellaneous),Electronic, Optical and Magnetic Materials

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