Abstract
In this work, we show magnetic-moment-induced metal–insulator transitions in ThMnXN (X = As, P) and elucidate some of the experimentally observed results obtained by Zhang et al. through a first principles density functional study. Our calculations revealed that the magnetic ground states of ThMnXN (X = As, P) are C-type anti-ferromagnets with a small energy gap (∼0.4 eV) at the Fermi level, which is in good agreement with the experiments. Our constraint moment calculations revealed local magnetic moments of 3.42 μB and 3.63 μB in Mn atoms for ThMnAsN and ThMnPN, respectively, which are consistent with the experimentally measured local magnetic moment for Mn atoms. An effective Hubbard U = (U − J) of 0.9 eV was applied within the GGA+U formalism in ThMnPN to reproduce the experimental Mn moment. We also found that, as the Mn moments decrease in ThMnXN (X = As, P), the energy gaps also decrease and finally disappear at Mn moment 2.7 μB for ThMnAsN and 2.8 μB for ThMnPN. Therefore, our results stipulate a possible metal–insulator transition in ThMnXN (X = As, P) induced by the Mn local moment.
Subject
Materials Chemistry,Chemistry (miscellaneous),Electronic, Optical and Magnetic Materials
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