Ag2S QDs/Si Heterostructure-Based Ultrasensitive SWIR Range Detector

Author:

Tretyakov IvanORCID,Svyatodukh Sergey,Perepelitsa AlekseyORCID,Ryabchun Sergey,Kaurova Natalya,Shurakov Alexander,Smirnov Mikhail,Ovchinnikov Oleg,Goltsman Gregory

Abstract

In the 20th century, microelectronics was revolutionized by silicon—its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 × 10−10 W/√Hz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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