Electron-Beam Processing of Aluminum-Containing Ceramics in the Forevacuum Pressure Range

Abstract

Aluminum–ceramic materials based on Al2O3 and AlN are widely used in the electronics industry and, according to a number of electrophysical and technical and economic parameters, are among the most suitable for the production of electrical and radio engineering products. In this study, it is shown that the treatment of ceramics based on Al2O3 with an electron beam with a power of 200–1100 W and a current of 10–50 mA leads to heating of the ceramic surface to a temperature of 1700 °C. When heated to a temperature of 1500 °C and kept at this temperature for no more than 10 s, an increase in the roughness of the ceramic surface is observed by more than an order of magnitude. At the same time, for ceramic substrates based on aluminum nitride, an increase in the temperature of electron beam treatment from 1300 to 1700 °C leads to an increase in thermal conductivity from 1.5 to 2 times. The edge angle of water wetting of the AlN surface can vary from 20 to 100 degrees depending on the processing temperature, which allows one to control the transition of the material from a hydrophilic to a hydrophobic state. At the same time, electron beam exposure to Al2O3 does not change the wettability of this material so much. Electron beam processing in the forevacuum pressure region allows controlled changes in the electrophysical properties of ceramic materials based on Al2O3 and AlN.