Dielectric Properties of Compacts Sintered after High-Pressure Forming of Lithium Fluoride

Author:

Ctibor Pavel1ORCID,Straka Libor2,Sedláček Josef2,Lukáč František1

Affiliation:

1. The Czech Academy of Sciences, Institute of Plasma Physics, Za Slovankou 3, 182 00 Prague, Czech Republic

2. Faculty of Electrical Engineering, Czech Technical University, Technická 2, 160 00 Prague, Czech Republic

Abstract

High-pressure forming at 300 MPa and room temperature was applied before the sintering of a lithium fluoride (LiF) powder. The as-fired samples were tested as dielectrics and showed very interesting characteristics. The best sample, sintered at 750 °C for 8 h, had a relative permittivity of 12.1 and a loss tangent of 0.0006, both of them frequency-independent and temperature-independent up to at least 150 °C, and moreover, the volume DC resistivity was 27.4 × 1012 Ωm at room temperature. These parameters are comparable with oxide ceramics, processed at temperatures over 1300 °C, as for example, aluminum dioxide (Al2O3) or Y3Al5O12 (YAG). LiF material is advantageous because of its very low sintering temperature, which is only about one-half of typical oxide ceramic dielectrics.

Publisher

MDPI AG

Subject

Materials Science (miscellaneous),Ceramics and Composites

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