Preparation of Polycrystalline Silicon by Metal-Induced Crystallization of Silicon–Carbon Powder

Abstract

In this study, we successfully obtained crystalline silicon from silica powder using a metal-induced crystallization method. For this purpose, powders were first prepared from organosilicon compounds and finely dispersed aluminum particles, then their metal-induced crystallization was carried out by annealing at the temperature of 570 °C. Powders of organosilicon compounds (tetraethoxysilane and polyethylhydrosiloxane) were prepared by different technological operations in order to determine precisely the presence of carbon in the product. The results showed that the presence of carbon in silica powder affects the production of crystalline silicon. In silica powders containing no carbon, the formation of crystalline substances does not occur at the annealing temperature of 570 °C. The results of this study are of great importance for the production of polycrystalline silicon powders obtained at reduced temperatures.