Affiliation:
1. G.G. Devyatykh Institute of Chemistry of High-Purity Substances of the RAS, Nizhny Novgorod 603951, Russia
2. Transparent Ceramics Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
Abstract
Zinc chalcogenides doped with Cr2+ or Fe2+ ions are of considerable interest as active media for IR lasers operating in the 2–5 µm wavelength range. Such lasers are in demand in various fields of medicine, remote sensing and atmospheric monitoring, ranging, optical communication systems, and military applications. In recent years, however, the rate of improvement in the characteristics of zinc chalcogenide laser sources has slowed considerably. Unwanted thermally induced effects, parasitic oscillations, and laser-induced damage of the active element have hindered the scaling of output power and efficiency. However, the physical and chemical properties of the materials leave ample room for further improvements. In particular, the control of the dopant concentration profile in the active element is of great importance. Zero concentration of Cr2+ or Fe2+ ions on the radiation input/output surfaces can significantly increase the laser-induced damage threshold; the designed concentration distribution in the element volume allows regulation of heat dissipation and reduction of parasitic oscillations. The zinc chalcogenide ceramic technology seems to be the most suitable to solve this challenge. This review presents and discusses the state of the art in ZnS and ZnSe optical and laser ceramics and the directions for further development of their technology.
Funder
RUSSIAN SCIENCE FOUNDATION
Subject
Materials Science (miscellaneous),Ceramics and Composites
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