A Compact Memristor Model Based on Physics-Informed Neural Networks

Author:

Lee Younghyun1,Kim Kyeongmin1ORCID,Lee Jonghwan1ORCID

Affiliation:

1. Department of System Semiconductor Engineering, Sangmyung University, Cheonan 31066, Republic of Korea

Abstract

Memristor devices have diverse physical models depending on their structure. In addition, the physical properties of memristors are described using complex differential equations. Therefore, it is necessary to integrate the various models of memristor into an unified physics-based model. In this paper, we propose a physics-informed neural network (PINN)-based compact memristor model. PINNs can solve complex differential equations intuitively and with ease. This methodology is used to conduct memristor physical analysis. The weight and bias extracted from the PINN are implemented in a Verilog-A circuit simulator to predict memristor device characteristics. The accuracy of the proposed model is verified using two memristor devices. The results show that PINNs can be used to extensively integrate memristor device models.

Funder

Korea Environmental Industry & Technology Institute

National Research Foundation of Korea

Publisher

MDPI AG

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