Affiliation:
1. State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
Abstract
The paper reports on high voltage (HV)-isolated MEMS quad–solenoid transformers for compact isolated gate drivers and bias power supplies. The component is wafer-level fabricated via a novel MEMS micro-casting technique, where the tightly coupled quad–solenoid chip consists of monolithically integrated 3D inductive coils and an inserted ferrite magnetic core for high-efficiency isolated power transmission through electromagnetic coupling. The proposed HV-isolated transformer demonstrates a high inductance value of 743.2 nH, along with a small DC resistance of only 0.39 Ω in a compact footprint of 6 mm2, making it achieve a very high inductance integration density (123.9 nH/mm2) and the ratio of L/R (1906 nH/Ω). More importantly, with embedded ultra-thick serpentine-shaped (S-shaped) SiO2 isolation barriers that completely separate the primary and secondary windings, an over 2 kV breakdown voltage is obtained. In addition, the HV-isolated transformer chips exhibit a superior power transfer efficiency of over 80% and ultra-high dual-phase saturation current of 1.4 A, thereby covering most practical cases in isolated, integrated bias power supplies such as high-efficiency high-voltage-isolated gate driver solutions.
Funder
The National Science Foundation of China
Cited by
1 articles.
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