Direct Synthesis of Graphene Quantum Dots with Different Fluorescence Properties by Oxidation of Graphene Oxide Using Nitric Acid

Abstract

Graphene quantum dots (GQDs) play a critical role in many applications in the electrical and optical fields. We develop a simple three-step hydrothermal etching method to prepare GQDs by adopting graphene oxide (GO) as a precursor and nitric acid as an oxidant. We discuss the formation mechanism of GQDs by the characterization of products and intermediates with Scanning electronic microscopy (SEM), Transmission electron microscopic (TEM), Raman, Fourier transform infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS). Two kinds of GQDs have been obtained after the treatment of GO with different concentrations of nitric acid. The sizes of GQDs are small, with diameters of 3.38 nm and 2.03 nm on average, respectively. When excited with 365 nm UV light, the two kinds of GQDs exhibit green and yellow luminescence; the different optical properties can be attributed to the differences in degree of oxidation and nitrogen doping. The result is important for GQDs in synthesizing and optical field.