Temperature Rise Characteristics of Silicon Avalanche Photodiodes in Different External Capacitance Circuits Irradiated by Infrared Millisecond Pulse Laser

Abstract

We experimentally studied the interaction between a millisecond pulse laser and silicon avalanche photodiode (Si-APD) in an external capacitance circuit. The temperature rise law of Si-APD irradiated by a millisecond pulse laser under different external capacitance conditions was obtained. The results show that the surface temperature rise in a Si-APD is strongly dependent on the external capacitance. That is, the smaller the external capacitance, the smaller the surface temperature rise. The effect of the external capacitance on the surface temperature rise in a Si-APD was investigated for the first time in the field of laser damage. The research results have a certain practical significance for the damage and protection of mid-infrared detectors.