A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

Abstract

Theoretical study and software simulation on the sensitivity of silicon nanowires (SiNWs) field effect transistor (FET) sensors in terms of surface-to-volume ratio, depletion ratio, surface state and lattice quality are carried out. Generally, SiNWs-FET sensors with triangular cross-sections are more sensitive than sensors with circular or square cross-sections. Two main reasons are discussed in this article. Firstly, SiNWs-FET sensors with triangular cross-sections have the largest surface-to-volume ratio and depletion ratio which significantly enhance the sensors’ sensitivity. Secondly, the manufacturing processes of the electron beam lithography (EBL) and chemical vapor deposition (CVD) methods seriously affect the surface state and lattice quality, which eventually influence SiNWs-FET sensors’ sensitivity. In contrast, wet etching and thermal oxidation (WETO) create fewer surface defects and higher quality lattices. Furthermore, the software simulation confirms that SiNWs-FET sensors with triangular cross-sections have better sensitivity than the other two types of SiNWs-FET sensors under the same conditions, consistent with the theoretical analysis. The article fully proved that SiNWs-FET sensors fabricated by the WETO method produced the best sensitivity and it will be widely used in the future.