Author:
Ding Zikun,Wang Zhichao,Zhang Bowen,Lu Guo-Quan,Mei Yun-Hui
Abstract
Electrochemical migration (ECM) of sintered nano-Ag could be a serious reliability concern for power devices with high-density packaging. An anti-ECM nano-Ag-SiOx paste was proposed by doping 0.1wt% SiOx nanoparticles rather than previously used expensive noble metals, e.g., palladium. The ECM lifetime of the sintered nano-Ag-SiOx was 1.5 to 3 times longer than that of the sintered nano-Ag, due to the fact that the SiOx could protect the Ag from oxidation. The thermo-mechanical reliability of the sintered nano-Ag-SiOx was also improved by sintering under 5 MPa assisted pressure. The lesser porosity and smaller grain boundaries of the sintered nano-Ag-SiOx could also be beneficial to retard the silver ECM. In the end, a double-sided semiconductor device was demonstrated to validate the better resistance to the ECM using the sintered nano-Ag-SiOx.
Funder
National Natural Science Foundation of China
Tianjin Municipal Science and Technology Bureau
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
4 articles.
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