Mechanism of Thin Layers Graphite Formation by 13C Implantation and Annealing-Reference-Cited by-同舟云学术

Mechanism of Thin Layers Graphite Formation by 13C Implantation and Annealing

Published:2014-04-21 Issue:2 Volume:4 Page:180-194
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Gutierrez Gaelle,Normand François,Aweke Fitsum,Muller Dominique,Speisser Claude,Antoni Frédéric

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

http://www.mdpi.com/2076-3417/4/2/180/pdf

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1. Graphene: synthesis and applications

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3. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

4. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

5. Chemical vapor deposition of thin graphite films of nanometer thickness

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