Photoluminescence of Cesium-Doped Sodium Iodide Films Irradiated by UV LED

Author:

Wu Hsing-Yu123,Kuan Yu-Hung4,Yu Guoyu5,Sun Yung-Shin4ORCID,Hsu Jin-Cherng246ORCID

Affiliation:

1. System Manufacturing Center, National Chung-Shan Institute of Science and Technology, New Taipei City 237209, Taiwan

2. Center for Astronomical Physics and Engineering, Department of Optics and Photonics, National Central University, Taoyuan City 320317, Taiwan

3. Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan

4. Department of Physics, Fu Jen Catholic University, New Taipei City 242062, Taiwan

5. Department of Engineering and Technology, School of Computing and Engineering, University of Huddersfield, Queensgate, Huddersfield HD1 3DH, UK

6. Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, New Taipei City 242062, Taiwan

Abstract

Alkali metal halides have long been used as scintillators for applications as sensors and detectors. Usually, a small amount of impurities are added to these inorganic materials to improve their luminescence efficiencies. We investigate the structures and luminescent properties of un-doped sodium iodide (NaI) and cesium-doped NaI (NaI:Cs) films deposited by thermal vacuum evaporation. Instead of using the toxic element thallium (Tl), we introduced cesium dopant into NaI. This is the first study for the NaI:Cs film excited by UV LED’s ultraviolet C (273 nm, 4.54 eV). The luminescence spectra show two main peaks at 3.05 and 4.32/3.955 eV (for fused silica/B270 substrate), originating from the intrinsic defects and/or activator excited states and the intrinsic self-trapped excitons (STEs), respectively. In general, both Cs-doping and post-annealing processes enhance the luminescence performance of NaI films.

Funder

Ministry of Science and Technology of Taiwan

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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