Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal

Author:

Khudaiberdiev Daniiar12ORCID,Kvon Ze Don23,Entin Matvey V.2,Kozlov Dmitriy A.24ORCID,Mikhailov Nikolay N.23,Ryzhkov Maxim12

Affiliation:

1. Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria

2. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia

3. Novosibirsk State University, Novosibirsk 630090, Russia

4. Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany

Abstract

Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 μm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They are absent in the regime of electron metal (at positive gate voltages) and strongly depend on the level of disorder in the system. All the experimental facts lead us to the conclusion that the origin of the fluctuations is a special collective state in which the current is conducted through the percolation network of electron resistances. We suppose that the network is formed by fluctuation potential whose amplitude is higher than the Fermi level of electrons due to their very low density.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

Reference48 articles.

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5. Imry, Y. (2002). Introduction to Mesoscopic Physics, Oxford University Press Inc.

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