Morphology Controlled Fabrication of InN Nanowires on Brass Substrates
Author:
Funder
National Science Foundation of China
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/6/11/195/pdf
Reference58 articles.
1. A revolution in lighting
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
4. GaN∕AlGaN ultraviolet/infrared dual-band detector
5. GaN nanowire ultraviolet photodetector with a graphene transparent contact
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