Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation-Reference-Cited by-同舟云学术

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Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

Published:2016-11-10 Issue:11 Volume:6 Page:206
ISSN:2079-4991
Container-title:Nanomaterials
language:en
Short-container-title:Nanomaterials

Author:

Giubileo Filippo,Di Bartolomeo Antonio,Martucciello Nadia,Romeo Francesco,Iemmo Laura,Romano Paola,Passacantando Maurizio^ORCID

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

Link

http://www.mdpi.com/2079-4991/6/11/206/pdf

Reference43 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

3. The electronic properties of graphene

4. Approaching ballistic transport in suspended graphene

5. Current-induced cleaning of graphene

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1. Total ionizing dose effect on graphene field effect transistors;Journal of the Korean Physical Society;2024-05-31

2. Study on total X-ray dose effect of graphene field effect transistor;Acta Physica Sinica;2024

3. Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors;Journal of Physics: Conference Series;2022-10-01

4. Field Emission from Graphene Layers;Lecture Notes in Electrical Engineering;2022-06-29

5. Superconducting- and Graphene-Based Devices;Nanomaterials;2022-06-15

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