Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing

Author:

Alqahtani ZahrahORCID,Alghamdi NawalORCID,Robshaw Thomas J.ORCID,Dawson Robert,Ogden Mark D.ORCID,Buckely Alastair,Grell Martin

Abstract

We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, PurometTM MTS9501, and were filled into a plasticised poly(vinyl chloride) (PVC) phase transfer membrane. We found a potentiometric response (membrane potential leading to WGTFT threshold shift) to fluoride following a Langmuir–Freundlich (LF) adsorption isotherm with saturated membrane potential up to ~480 mV, extremely low characteristic concentration c1/2 = 1/K, and picomolar limit of detection (LoD), even though ion exchange did not build up charge on the resin. La-loading gave a superior response compared to Al-loading. Membrane potential characteristics were distinctly different from charge accumulating sensitisers (e.g., organic macrocycles) but similar to the Cs+ (cation) selective ion-exchanging zeolite mineral ‘mordenite’. We propose a mechanism for the observed threshold shift and investigate interference from co-solutes. Strong interference from carbonate was brought under control by ‘diluting’ metal loading in the resin. This work sets a template for future studies using an entirely new ‘family’ of sensitisers in applications where very low limit of detection is essential such as for ions of arsenic, mercury, copper, palladium, and gold.

Funder

Taif University

University of Tabuk

Engineering and Physical Sciences Research Council

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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