Graphene Multi-Frequency Broadband and Ultra-Broadband Terahertz Absorber Based on Surface Plasmon Resonance

Author:

Chen Zihao12,Cai Pinggen3,Wen Qiye2,Chen Hao1,Tang Yongjian1,Yi Zao14ORCID,Wei Kaihua5,Li Gongfa6ORCID,Tang Bin7ORCID,Yi Yougen8

Affiliation:

1. Joint Laboratory for Extreme Conditions Matter Properties, Tianfu Institute of Research and Innovation, State Key Laboratory of Environmental Friendly Energy Materials, Key Laboratory of Manufacturing Process Testing Technology of Ministry of Education, Southwest University of Science and Technology, Mianyang 621010, China

2. State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

3. Department of Applied Physics, College of Science, Zhejiang University of Technology, Hangzhou 310023, China

4. School of Chemistry and Chemical Engineering, Jishou University, Jishou 416000, China

5. School of Automation, Hangzhou Dianzi University, Hangzhou 310018, China

6. Key Laboratory of Metallurgical Equipment and Control Technology of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China

7. School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, China

8. College of Physics and Electronics, Central South University, Changsha 410083, China

Abstract

When surface plasmon resonance (SPR) occurs, the incident light is absorbed by the surface of the SPR structure, thus minimizing the intensity of the reflected light. Therefore, the SPR method is adopted in this paper to achieve perfect absorption of the absorbent. In this paper, we first propose a multi-frequency broadband absorber structure based on graphene SPR, which uses the continuous resonance of patterned graphene surface plasmon in the frequency spectrum to form a multi-frequency broadband absorption. In this simulation, a sandwich-stack structure was adopted, whereby the patterned graphene is situated on top of the SiO2 layer and the metal layer. The broad-band absorption bands of the absorber were obtained as 4.14–4.38 THz, 5.78–6.36 THz, and 7.87–8.66 THz through the analog simulation of finite-difference time-domain method (FDTD) solutions. Then, based on the multi-layer resonant unit structure, through the superposition and combination of absorbing units responding to different frequency bands, the perfect absorption of ultra-wideband is achieved. The data results illustrate that the total absorption bandwidth of the absorber is 2.26 THz, and the relative absorption bandwidth Bw is equal to 28.93%. The electric field in X-Y direction of the absorber in the perfect absorption band is analyzed, respectively, and the dynamic tunability of the absorber is studied. Finally, we studied whether the absorbing structure still has efficient absorption characteristics for the two polarization modes when the incident angle is changed from 0° to 70°. The structure model proposed has potential value for application in terahertz photoelectric detection, filtering, and electromagnetic shielding.

Funder

National Natural Science Foundation of China

Hubei Key Laboratory of Mechanical Transmission and Manufacturing Engineering at Wuhan University of Science and Technology

Key Laboratory for Metallurgical Equipment and Control Technology of Ministry of Education in Wuhan University of Science and Technology

Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

Funded by the second batch of industry university cooperation collaborative education project in 2021

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

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