Abstract
Gallium nitride (GaN) devices are becoming more popular in power semiconductor converters. Due to the absence of the freewheeling substrate diode, the reverse conduction region is used in GaN transistors to conduct the freewheeling current. However, the voltage drop across the device in the reverse conduction mode is relatively high, causing additional power losses. These losses can be optimized by adequately adjusting the dead-time issued by the microcontroller. The dead-time loss minimization strategies presented in the literature have the common disadvantage that either additional hardware or specific converter data are needed for their proper operation. Therefore, this paper’s motivation is to present a novel dead-time loss minimization method for GaN-based high-frequency switching converters for electric drives that does not impose additional requirements on the hardware design phase and converter data acquisition. The method is based on optimizing the current controllers’ output with a simple perturb-and-observe tracker. The experimental results show that the proposed approach can minimize the dead-time losses over the whole drive’s operating range at the cost of only a moderate increase in software complexity.
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
3 articles.
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1. Dead Time Reverse Conduction Investigation in GaN-Based Inverter for Motor Drives;IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society;2022-10-17
2. Reduction of Harmonics and Inverter Temperature in Experimental GaN-based Motor Drive System at High Frequencies Using LC Filter;2022 IEEE Ninth International Conference on Communications and Electronics (ICCE);2022-07-27
3. Dead Time Management in GaN Based Three-Phase Motor Drives;2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe);2021-09-06