Improved Carrier-Based Modulation for the Single-Phase T-Type qZ Source Inverter

Author:

Fernão Pires Vitor12ORCID,Cordeiro Armando23ORCID,Foito Daniel14ORCID,Roncero-Clemente Carlos5ORCID,Romero-Cadaval Enrique5ORCID,Silva José Fernando26ORCID

Affiliation:

1. EST Setubal, Instituto Politécnico de Setúbal, 2910-761 Setúbal, Portugal

2. INESC-ID, 1000-029 Lisboa, Portugal

3. ISEL—Instituto Politécnico de Lisboa, 1000-029 Lisboa, Portugal

4. CTS-UNINOVA and LASI, 2829-516 Monte da Caparica, Portugal

5. Department of Electric, Electronic and Automation Engineering, University of Extremadura, 06006 Badajoz, Spain

6. IST—Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisboa, Portugal

Abstract

The Quasi-Impedance-Source Inverter (Quasi-Z inverter) is an interesting DC-AC converter topology that can be used in applications such as fuel cells and photovoltaic generators. This topology allows for both boost capability and DC-side continuous input current. Another very interesting feature is its reliability, as it limits the current when two switches on one leg are conducting simultaneously. This is due to an extra conduction state, specifically the shoot-through state. However, the shoot-through state also causes a loss of performance, increasing electromagnetic interference and harmonic distortion. To address these issues, this work proposes a modified carrier-based control method for the T-Type single-phase quasi-Z inverter. The modified carrier-based method introduces the use of two additional states to replace the standard shoot-through state. The additional states are called the upper shoot-through and the lower shoot-through. An approach to minimize the number of switches that change state during transitions will also be considered to reduce switching losses, improving the converter efficiency. The proposed modified carrier-based control strategy will be tested using computer simulations and laboratory experiments. From the obtained results, the theoretical considerations are confirmed. In fact, through the presented results, it is possible to understand important improvements that can be obtained in the THD of the output voltage and load current. In addition, it is also possible to verify that the modified carrier method also reduces the input current ripple.

Funder

FCT, Fundação para a Ciência e a Tecnologia

Publisher

MDPI AG

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