Abstract
This study presents a dual-band power amplifier (PA) with two output ports using a simplified three-port, frequency-dividing matching network. The dual-band, dual-output PA could amplify a dual-band signal with one transistor, and the diplexer-like output matching network (OMN) divided the two bands into different output ports. A structure consisting of a λ/4 open stub and a λ/4 transmission line was applied to restrain undesired signals, which made each branch equivalent to an open circuit at another frequency. A three-stub design reduced the complexity of the OMN. Second-order harmonic impedances were tuned for better efficiency. The PA was designed with a 10-W gallium nitride high electron mobility transistor (GaN HEMT). It achieved a drain efficiency (DE) of 55.84% and 53.77%, with the corresponding output power of 40.22 and 40.77 dBm at 3.5 and 5.0 GHz, respectively. The 40%-DE bandwidths were over 200 MHz in the two bands.
Funder
National Natural Science Foundations of China
Fundamental Research Funds for the Central Universities
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
4 articles.
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