Mitigating the Effects of Design for Manufacturability on Design Iteration Cycles in Advanced Integrated Circuit Design

Author:

Wu Chan-Liang1,Lu Chih-Wen12

Affiliation:

1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300044, Taiwan

2. Institute of Photonic System, National Yang Ming Chiao Tung University, Tainan 71150, Taiwan

Abstract

In integrated circuit (IC) design for advanced manufacturing processes, iterative improvement processes are an approach commonly used for improving design quality, particularly for low-energy, high-frequency circuits. Layout-dependent effects (LDEs) affect IC design and fabrication, resulting in differences in circuit functionality and performance in presimulation versus postsimulation. These differences can greatly increase the length of design iteration cycles. Foundries have attempted to accelerate the iterative design process by providing process design kit libraries to IC designers. However, these kits can neither fully mitigate the negative affect of LDEs on design for manufacturability (DFM) nor eliminate the difference between presimulation and postsimulation results. To address this problem, this study proposed a novel algorithm-based design process in which an IC designer can use layout parasitic extraction to extract the DFM parameters of all components in a circuit prior to the routing process; these parameters include netlists that describe the internal connectivity of components as well as their interconnectivity with other components. Accordingly, the IC designer can determine the effects of DFM parameters on the circuit and modify them in advance if necessary. When the LDEs generated by device placement have been confirmed to not affect circuit properties, physical verification of the routing of metal wires in the IC layout can be performed. In this verification, postsimulations only need to focus on problems regarding the wire loading and timing effects of metal routing. The proposed design process is useful for mitigating LDEs in IC design and considerably reduces the time required for iterative improvement processes. Specifically, this study provides a method of enhancing design iteration cycles and provides guidelines for analyzing factors that hinder IC device functionality and performance. In sum, various problems can be resolved by separately extracting the DFM parameters associated with LDEs and parasitic parameters associated with routing.

Funder

Project of Taipei Veterans General Hospital and University System of Taiwan

Ministry of Science and Technology, Taiwan

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Reference15 articles.

1. Williams, N., and Miller, J. (2020). PDKs for Analog/Mixed-Signal (AMS) Design and Verification, Mentor Graphics.

2. Drennan, P.G., Kniffin, M.L., and Locascio, D.R. (2006, January 10–13). Implications of Proximity Effects for Analog Design. Proceedings of the IEEE 2006 Custom Integrated Circuits Conference (CICC), San Jose, CA, USA.

3. Wang, J. (2023, June 04). Layout Component Placement and Routing: Virginia Tech. Available online: https://www.mics.ece.vt.edu/content/dam/mics_ece_vt_edu/ICDesign/Tutorials/tsmc180/n05_Layout%20Component%20Placement%20and%20Routing.pdf.

4. McAndrew, C. (2011). Proximity Effect Modeling, Oxford University Press.

5. Dunga, M.V., Yang, W., Xi, X., He, J., Liu, W., Cao, K.M., Jin, X., Ou, J.J., Chan, M., and Niknejad, A.M. (2007). BSIM4.6.1 MOSFET Model—User’s Manual, Department of Electrical Engineering and Computer Sciences, University of California.

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