Abstract
Due to parasitic parameters existing in Silicon Carbide (SiC) devices application, SiC devices have poor turn-off performances. SiC diode and SiC MOSFET have severe turn-off overvoltage and oscillation. The DC-side snubber is one simple suppressing method. The simplest circuit is the high-frequency decoupling capacitor in parallel with the bridge leg. However, choosing the component value is empirical. Based on the turn-off terminal impedances of the SiC diode and the SiC MOSFET, the suppressing mechanism of this DC-side snubber is analyzed. The guideline selection for the component value is provided. Furthermore, the DC-side snubber with a damping resistor is analyzed based on the terminal impedances. The design principles are provided. Finally, the validity and effectiveness of the DC-side snubbers were proven based on the double-pulse test platform.
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
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