A 1.2 V, 92 dB Dynamic-Range Delta-Sigma Modulator Based on an Output Swing-Enhanced Gain-Boost Inverter

Author:

Wu Honghao12ORCID,Li Wenchang13,Zhang Tianyi1,Li Guanqi12,Liu Jian24

Affiliation:

1. Laboratory of Solid-State Optoelectronic Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China

3. School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100083, China

4. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Abstract

This article presents a third-order, feedforward, single-bit Delta-Sigma analog-to-digital modulator (DSM) based on an output swing-enhanced gain-boost inverter for low-voltage low-power applications such as wearable devices, mobile health, and the Internet of Things (IoTs). The proposed output swing-enhanced structure addresses the output-swing reduction in the conventional structure while achieving high DC gain and large output swing simultaneously. Implemented in a 180 nm CMOS process, the entire chip is comprised of a delta-sigma modulator, an oscillator, and a current reference. It achieves 86.1 dB peak SNR and 92 dB dynamic range (DR) with 1.95 kHz signal bandwidth. The whole chip dissipates 54.5 μW, leading to a 167.6 dB Schreier Figure of Merit (FoMs).

Publisher

MDPI AG

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