Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient-Reference-Cited by-同舟云学术

Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient

Published:2023-04-11 Issue:8 Volume:12 Page:1809
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Ma Ying¹²^ORCID,Chen Liang³,Dong Zhihua³,Hong Yifang¹²,Xiao Yang²,Xin Yijie¹²,Zhang Bin⁴,Qin Hua²,Zhang Ting⁵,Zhang Xiaodong¹⁶,Yu Guohao⁶,Cheng Zhiqun³,Mao Lingfeng⁷,Cai Yong¹²^ORCID

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

2. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China

3. School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China

4. Institute of Microelectronics, Peking University, Beijing 100871, China

5. i-Lab, Nano-X Vacuum Interconnected Workstation, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou 215123, China

6. Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China

7. School of Computer & Communication Engineering, University of Science & Technology, Beijing 100083, China

Abstract

This letter reports the phenomenon of current drops in an AlGaN/GaN heterojunction with CF4 plasma treated in a polar gas ambient. Ungated AlGaN/GaN HEMT with CF4 plasma treatment was tested in ethanol, acetonitrile, and an acetic acid gas ambient, and the current dropped by 52%, 51% and 61%, respectively, which are much higher than the drops (6%, 7%, and 8%) in normal ungated HEMT. On the one hand, based on “ambient doping”, a possible model was proposed to explain this phenomenon. On the other hand, the lower initial current was very important to increase the sensitivity. This means that the initial current should be elaborately designed to achieve maximum sensitivity.

Funder

Key Research and Development Program of Jiangsu Province

Key Research and Development Program of Jiangxi Province

Youth Innovation Promotion Association of the Chinese Academy of Sciences

The National Natural Science Foundation of China

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/12/8/1809/pdf

Reference20 articles.

1. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment;Yong;IEEE Electron Device Lett.,2005

2. Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure;Pandit;Sci. Rep.,2020

3. The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors;Sokolovskij;IEEE Sens. J.,2020

4. AlGaN/GaN HEMT based sensor and system for polar liquid detection;Chaturvedi;Sens. Actuators A Phys.,2020

5. Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment;Chung;Results Phys.,2019