Designing a 1550 nm Pulsed Semiconductor Laser-Emission Module Based on a Multiquantum-Well Equivalent Circuit Model

Abstract

The demand for eye-safe 1550 nm pulsed semiconductor laser-emission modules is increasing in the field of active laser detection, owing to their long range and high precision. The high power and narrow pulse of these modules can significantly improve the distance and accuracy of active-laser detection. Here, we propose an equivalent circuit model of a multiquantum-well laser based on the structure of a laser device. We developed a design method for 1550 nm pulsed semiconductor laser-emission modules according to the equivalent circuit model of an InGaAlAs laser. In this method, the module design was divided into laser chip and laser-driver levels for optimization and simulation. At the chip level, a high-output power laser chip with optimal cavity length and optical facet coating coefficients was obtained. At the laser-driver level, the model was applied to a drive circuit to provide direct narrow optical pulses. Finally, a laser-emission module was fabricated based on the optimal design results. In addition to the power-current features of the actual laser, the critical voltage of the emission module and laser pulses were tested. By comparing the test and simulation results, the effectiveness of the proposed method was confirmed.