Abstract
Silicon Photomultipliers (SiPMs) are photo-electronic devices able to detect single photons and permit the measurement of weak optical signals. Single-photon detection is accomplished through high-performance read-out front-end electronics whose design needs accurate modeling of the photomultiplier device. In the past, a useful model was developed, but it is limited to the device electrical characteristic and its parameter extraction procedure requires several measurement steps. A new silicon photomultiplier model is proposed in this paper. It exploits the Verilog-a behavioral language and is appropriate to transistor-level circuit simulations. The photon detection of a single cell is modeled using the traditional electrical model. A statistical model is included to describe the silicon photomultiplier noise caused by dark-count or after-pulsing effects. The paper also includes a procedure for the extraction of the model parameters through measurements. The Verilog-a model and the extraction procedure are validated by comparing simulations to experimental results.
Funder
Università degli Studi di Catania
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering