A Dual-Mode InGaP/GaAs HBT Power Amplifier Using a Low-Loss Parallel Power-Combining Transformer with IMD3 Cancellation Method

Abstract

A dual mode InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) using a parallel power-combining transformer (PCT) is presented herein. A low loss transformer is implemented on a printed circuit board (PCB) to improve the passive efficiency of a PCT. Dual-mode operation is applied to reduce the current consumption at a low power level. In the low-power (LP) mode, one of the individual amplifiers is turned off to reduce the current consumption. Additionally, a third-order intermodulation distortion (IMD3) cancellation method using a PCT combiner is proposed to improve linearity performance. Nonlinear IMD3 components from each amplifier cancel each other out through magnetic coupling in the secondary winding of the PCT. The implemented PA achieves a saturated output power of 33.8 dBm and a peak power-added efficiency (PAE) of 54.5% at 0.91 GHz with a 5-V power supply. An average output power of 25.2 dBm with an adjacent channel leakage ratio (ACLR) of −42 dBc is delivered when the PA is tested with an orthogonal frequency division multiplexing (OFDM) 64-quadrature amplitude modulated (64-QAM) signal with a bandwidth of 10 MHz and peak-to-average power ratio (PAPR) of 7.8 dB. When compared with the high-power (HP) mode operation, the LP mode operation could save 48% of the current consumption at an average output power of 10.4 dBm.