Author:
Liu Quanwang,Zhang Bo,Zhen Shaowei,Xue Weidong,Qiao Ming
Abstract
Traditional bandgap reference (BGR) is sensitive to process variation and is not suitable for mass production. Consequently, a stacked piece-wise compensated bandgap reference (SPWBGR) with low beta bipolar is proposed, designed and fabricated in the 0.18 μm high-voltage (HV) BCD process. Two stacked BGR (SBGR) cores make up the proposed BGR circuit. Through setting the target reference voltage near the output voltage of SBGR cores, the feedback resistor ratio is reduced and the base current side-effect is significantly decreased. Notably, the SBGR core is implemented by the low beta npn bipolar and it relaxes the requirement for the high beta bipolar. The two SBGR cores are almost identical except for the temperature slope and feedback ratio. The two cores have different zero temperature coefficient (TC) points, one is set at −5 °C, and the other is set at 60 °C, named as SBGRA and SBGRB, respectively. The SBGRA and SBGRB output the same voltage at their zero TC point. The higher voltage of SBGRA and SBGRB is the output voltage. Through the process of tracking the maximum value of different SBGR cores, the proposed SPWBGR achieves 2.6 ppm/°C TC from −40 to 100 °C. As a result, the average TC for five random samples is 5.3 ppm/°C. The line regulation is 2 mV/V from 4.5 to 5.5 V power supply. The current consumption is 6.8 µA. The active area of the proposed BGR is 0.075 mm2.
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
7 articles.
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